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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1149 DESCRIPTION With TO-126 package DARLINGTON High DC current gain Low collector saturation voltage APPLICATIONS For use in operating from IC without predriver ,such as hammer driver PINNING(See Fig.2) PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER HAN INC Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak SEM GE Open emitter Open base Open collector CONDITIONS OND IC TOR UC VALUE -100 -100 -8 -3.0 -5.0 UNIT V V V A A Ta=25ae PD Total power dissipation TC=25ae Tj Tstg Junction temperature Storage temperature 1.3 W 15 150 -55~150 ae ae Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=-1.5A ;IB=-1.5mA IC=-1.5A ;IB=-1.5mA VCB=-100V; IE=0 VEB=-5V; IC=0 IC=-1.5A ; VCE=-2V IC=-3A ; VCE=-2V 2000 1000 MIN TYP. -0.9 -1.5 2SB1149 SYMBOL VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 MAX -1.2 -2.0 -10 -2.0 15000 UNIT V V |I A mA Switching times ton tstg tf Turn-on time Storage time Fall time L K 0.5 IC=-1.5A ; IB1=-IB2=-1.5mA VCCO -40V;RL=27| |I |I |I s s s hFE-1 Classifications M 2000-5000 HAN INC 3000-7000 SEM GE OND IC TOR UC 2.0 1.0 5000-15000 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1149 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 |
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